| 摘要 |
PROBLEM TO BE SOLVED: To provide a part for a dry etching device, excellent in plasma resistance and less in fouling property. SOLUTION: This part for a dry etching device is produced by using a silicon carbide sintered compact having >=2.9g/cm<3> density and obtained by sintering a mixture of a uniformly mixed silicon carbide powder with a non-metal sintering additive. Preferably, the silicon carbide sintered compact is obtained by a hot press of the above mixture in a non oxidizing atmosphere, that the silicon carbide powder is obtained by a production method containing a solidifying process for solidifying a mixture obtained by mixing a silicon source containing a liquid state silicon compound, a carbon source containing a liquid organic compound capable of forming carbon and a polymerization or crosslinking catalyst to obtain a solid material and a burning process for burning the obtained solid material under a non oxidizing atmosphere for carbonization and further burning under the non oxidizing atmosphere, and that a total content of impurity element contained in the silicon carbide sintered compact is >=1ppm. |
