| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an oxide single crystal, enabling to produce the large oxide single crystal having a Ca3 Ga2 Ge4 O14 crystal structure containing Ge as a constituting element. SOLUTION: In this method for producing an oxide single crystal having a Ca3 Ga2 Ge4 O14 crystal structure containing Ge as a constituting element and raised from the melted liquid of starting raw materials in an atmosphere for raising the single crystal, a composition obtained by adding GeO2 to a stoichiometric composition in an excessive amount of <=1.0wt.% is used as the composition of the raw materials, or a gas having an oxygen partial pressure of >2×10<-1> atom is used as an atmosphere for raising the single crystal. |
