| 摘要 |
A data bus drive circuit for a semiconductor memory device, comprising true and complementary data buses for transferring true and complementary data from outside of the semiconductor memory device or from memory cells in the semiconductor memory device, respectively, a first control line for inputting an external read/write control signal, a second control line for inputting an external precharge command signal, a read precharge circuit for switching a voltage from a first voltage source to the true and complementary data buses in response to the read/write control signal from the first control line, a write precharge circuit for switching a voltage from a second voltage source to the true and complementary data buses in response to the read/write control signal from the first control line, and a control circuit for selectively applying the read/write control signal from the first control line to the read and write precharge circuits in response to the precharge command signal from the second control line. According to the present invention, the data bus can be precharged with half a supply voltage after a write operation is performed. Therefore, the data bus drive circuit can enhance the operation speed of the semiconductor memory device and reduce power consumption thereof.
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