| 摘要 |
<p>PURPOSE:To make it possible to form a practical pattern by a method wherein most of the patterns constituting elements are transferred using a phase-shifting type mask, and the part where a trouble occurs on the arrangement of a phase shifter, a trouble- occurred part is repaired using an electron-beam patterning method. CONSTITUTION:A phase-inverting shifter is provided on a light-interrupting part 1 and light-transmitting parts 2 and 4, and when a pattern is transferred to a negative type resist using the above-mentioned mask, the resist pattern 7 is disconnected at the part 8. This disconnection is caused by the presence of a shifter end 6 in the light-transmitting part, and as the phase is inversed on the shifter end, the intensity of light becomes zero, and the resist pattern is disconnected. The shifter of the size, which does not resolve with the ordinary mask, of the patterns 2, 3, 4 and 5, should be arranged as shown in the diagram mentioned separately, and the formation of the shifter end 6 in the light-transmitting part must be prevented. At this point, after a pattern has been exposed on the resist using a phase-shifter mask, or the part 8 is patterned by an electron beam, the disconnection is prevented at the part 9, and a resist pattern 7 is formed. The resist requires a negative type sensitivity to both ultraviolet rays and an electron beam.</p> |
