发明名称 |
Stacked capacitors for integrated circuit devices and related methods |
摘要 |
A method for fabricating a capacitor on a substrate includes the steps of forming an insulating layer on the substrate, and forming the first plate electrode on the insulating layer. A first dielectric layer is then formed on the plate electrode, and a first common storage electrode is formed on the first dielectric layer. A contact hole is then formed through the insulating layer, the first plate electrode, the first dielectric layer, and the first common storage electrode, thereby exposing a predetermined portion of the substrate. A first spacer is formed on a sidewall of the contact hole, and a conductive plug is formed in the contact hole extending from the substrate to the first common storage electrode.
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申请公布号 |
US5742472(A) |
申请公布日期 |
1998.04.21 |
申请号 |
US19960674883 |
申请日期 |
1996.07.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, MYOUNG-BUM;LEE, HYEON-DEOK |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01G4/06 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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