发明名称 EXHAUST GAS TREATMENT FOR CVD DEVICE AND EXHAUST GAS TREATING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To mitigate a load brought to bear on a detoxifying device and reduce the amount of an exhaust gas to leak into an atmosphere by turning an unreacted gas containing an oxidative gas to be exhausted from a CVD device so that a gas phase reaction is generated, then removing a solid particle formed by the reaction and supplying the residual gas to the detoxifying device. SOLUTION: In a CVD device 1, SiH4 gas and O2 gas are supplied into a port 2 respectively and are heated by a high frequency heating device 7 to undergo a gas phase reaction and in turn, form an SiO2 film on a silicon wafer 4. In this case, an unreacted gas is exhausted from an exhaust aperture 12. However, this exhaust gas is tengentially introduced into a cyclone 13 to be turned around a center cylinder 15 and a chemical reaction is generated by this turning. Further, an SiO2 solid particle is made remote from the center by a centrifugal force and is caused to fall to a recovery part 16 to be recovered. On the other hand, the residual gas finds its way into a packed layer 22 from the gas inlet 29 of a scrubber 18 as a detoxifying device, and a liquid such as water is atomized to fall into a liquid tank 26 and then is stored there.</p>
申请公布号 JPH1099635(A) 申请公布日期 1998.04.21
申请号 JP19960256307 申请日期 1996.09.27
申请人 TOUSETSU:KK 发明人 OSHIBE HIROSHI;ISSHIKI MOTOKI;NAGASHIMA ATSUSHI
分类号 B01D53/34;B01D47/06;B01D53/18;B01D53/46;B01D53/77;(IPC1-7):B01D53/46 主分类号 B01D53/34
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