WIDE BAND-GAP SEMICONDUCTORS HAVING LOW BIPOLAR RESISTIVITY AND METHOD OF FORMATION,申请号KR19890011544-传众专利搜索

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发明名称	WIDE BAND-GAP SEMICONDUCTORS HAVING LOW BIPOLAR RESISTIVITY AND METHOD OF FORMATION
摘要
申请公布号	KR0134771(B1)	申请公布日期	1998.04.20
申请号	KR19890011544	申请日期	1989.08.12
申请人	NEUMARK, GERTRUDE F.	发明人	NEUMARK, GERTRUDE F.
分类号	C30B29/48;C30B31/06;H01L21/208;H01L21/365;H01L21/368;H01L21/38;H01L33/00;H01L33/28;H01S5/00;(IPC1-7):H01L21/06	主分类号	C30B29/48
代理机构		代理人
主权项
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