发明名称 |
METHOD OF MANUFACTURE OF FILM RESISTORS |
摘要 |
FIELD: microelectronics. SUBSTANCE: resistive film is applied on dielectric substrate. Then cyclic low-temperature treatment is performed in liquid nitrogen for 25-30 min. This treatment alternates with exposure to air for 30-60 s. Method also includes annealing. Duration of keeping the substrate with film in liquid nitrogen is increased in every subsequent treatment cycle in compliance with mathematical expression. EFFECT: more efficient manufacturing process. 1 tbl
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申请公布号 |
RU2109360(C1) |
申请公布日期 |
1998.04.20 |
申请号 |
RU19960113826 |
申请日期 |
1996.07.09 |
申请人 |
NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT IZMERITEL'NYKH;NI SKIJ I IZMERITEL NYKH |
发明人 |
SKUPOV V.D.;SMOLIN V.K.;SKUPOV V.D.;SMOLIN V.K. |
分类号 |
H01C17/06;(IPC1-7):H01C17/06 |
主分类号 |
H01C17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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