发明名称 |
INTEGRATED CIRCUIT MANUFACTURING PROCESS |
摘要 |
FIELD: microelectronics. SUBSTANCE: digital devices and integrated circuits are formed on semiconductor substrate which is then thinned by chemical etching. Gettering layer is formed on underside of plate to ensure uniformetching, this procedure being followed by gettering baking which provides for reducing and ordering concentration of microdefects in plate volume. Pre-assembly operations include production of planar surface on rear side. EFFECT: improved quality of manufactured devices or integrated circuits. 6 cl, 5 dwg øøø1
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申请公布号 |
RU2109371(C1) |
申请公布日期 |
1998.04.20 |
申请号 |
RU19940027654 |
申请日期 |
1994.07.20 |
申请人 |
VALIEV KAMIL' AKHMETOVICH;VELIKOV LEONID VASIL'EVICH;VOLKOV VLADIMIR VASIL'EVICH;KAZAKOV VLADIMIR IL'ICH;KAL'NOV VLADIMIR ALEKSANDROVICH;KRAVCHENKO LEV NIKOLAEVICH;KRASNIKOV GENNADIJ JAKOVLEVICH |
发明人 |
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分类号 |
H01L21/322;H01L21/20;H01L21/324;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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