| 摘要 |
PROBLEM TO BE SOLVED: To improve a strong dielectric characteristic of a material formed with a specific base structure, and especially the characteristics in the case of using the material as a semiconductor memory by containing one of the constituting elements excessive to the other in the base structure. SOLUTION: This strong dielectric material having a base structure of ReMnO3 , in which either Re or Mn are easily oxidizable, is obtained by containing either one of Re or Mn in excess of within upper limit of 20% so as to make the composition uniform and reduce a leak current for improving a strong dielectric characteristic thereof. Also there are merits of having less space charge, reducing a natural oxide membrane at the Si perform part containing with the strong dielectric membrane and effectively charging a voltage in using as a MFS device. For example, in order to form a membrane of YMnO3 by using a vacuum deposition device for a MBE method, the membrane is formed by setting a perform plate 4 in a vacuum chamber 1, filling Y, Mn into crucibles 2, 3 as sources, raising temperature to around 700 deg.C in <=10<-9> Torr oxygen partial pressure for melting Y, Mn, then adjusting the shutters of the sources 2, 3 to form a membrane by blowing the oxide source to the perform plate 4. |
