| 摘要 |
A high energy ion implantation blocking method comprises (A) forming a field oxide film (1) on a part of field area of nitride film (3) eliminated selectively after forming a buffer oxide film (2) and nitride film (3) on a silicon substrate (7), (B) forming a low temperature oxide film (4) and blocking nitride film (5) by controlling the thickness according to the energy strength of ion implantation, (C) defining an area of ion implantation by a photography process after coating (5) with photoresists (6), (D) dry etching (6) and (5) in nitrogen atmosphere with a different etching ratio respectively, (E) dry etching (6) and (4) in oxygen atmosphere with a different etching ratio respectively, (F) eliminating the remaining (6) and high energy ion implanting, (G) eliminating (5), (4), (3) and (2).
|
