发明名称 METHOD AND APPARATUS FOR PLASMA DEPOSITION OF A THIN FILM ONTO THE INTERIOR SURFACE OF A CONTAINER
摘要 <p>A gas inlet (40), which also serves as a counter electrode, is located inside of a vacuum chamber (14) made of an electrically insulating material. A container (12) is mounted on a mandrel (92) mounted on the gas inlet (40). The chamber (14) is evacuated to a subatmospheric pressure. A process gas (54) is then introduced into the container (12) through the gas inlet (40). The process gas is ionized by coupling RF power (88) to a main electrode (86) located adjacent an exterior surface of the chamber (14) and to the gas inlet (40) which deposits a plasma enhanced chemical vapor deposition (PECVD) thin film onto the interior surface of the container (12).</p>
申请公布号 WO1998015669(A1) 申请公布日期 1998.04.16
申请号 US1997017123 申请日期 1997.10.02
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址