beta -silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400-1500 DEG C range, pressure 6.7kPa or less, H2/methyltrichlorosilane molar ratios of 4:-30: 1 and a deposition rate of 1 mu m or less. <IMAGE>
申请公布号
DE69316172(T2)
申请公布日期
1998.04.16
申请号
DE1993616172T
申请日期
1993.10.07
申请人
CVD INC., WOBURN, MASS., US
发明人
GOELA, JITENDRA S., ANDOVER, MASSACHUSETTS 01810, US;TAYLOR, RAYMOND L., SAUGUS, MASSACHUSETTS 01906, US;BURNS, LEE E., READING, MASSACHUSETTS 01867, US
