Low dielectric constant insulating film production

摘要

A method of forming a low dielectric constant insulating film involves supplying a first fluorine-containing and carbon-containing source gas and a second silicon dioxide-containing source gas to a double-frequency reactor for high density plasma formation and formation of a fluorocarbon/silicon oxide composite film on a substrate within the reactor. Preferably, the first source gas contains perfluorobenzene (C6F6) and the second source gas contains hexamethyl disiloxane (HMDSO). The substrate may consist of silicon, metal, ceramic, glass, polymer or potassium chloride. Preferably, the flow rates of the first and second source gases are 12.6 sccm and 1.4 sccm, respectively, and the ratio of the second source gas to the sum of the first and second source gases is 0.01-0.99. The substrate is preferably held at 60-350 deg C and biased at -50 to -400 V. The pressure in the reactor is preferably 6.66-26.66 Pa (50-200/*10<-3> torr).