| 摘要 |
A fabrication method of capacitor is provided to improve cell capacitance and yield. The method comprises the steps of: forming an etch stopping layer(52), a first insulator(54), a first conductive layer(56) and a second insulator(58) on a substrate(10) having transistor; forming a contact hole by selective etching the second insulator(58), the first conductive layer(56) and the first insulator(54) to expose the source region(16) of the transistor; depositing a second conductive layer(60); defining a storage electrode(100) by unit cell by etching the second conductive layer(60), the second insulator(58) and the first conductive layer(56); and forming a dielectric layer(110) and a plate electrode(120). Thereby, it is possible to increase the cell capacitance using simple processes.
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