| 摘要 |
<p>The invention concerns a component constituting a dual thyristor, normally conducting and capable of being blocked by a voltage pulse on the control electrode, comprising a thyristor (Th), a first depletion MOS transistor (MD1) whose grid is coupled with the source connected between the anode gate (GA) and the cathode (K) of the thyristor, and second enrichment MOS transistor (ME2) whose grid is connected to a control terminal (G).</p> |
