PROCESS OF FABRICATING BI-CMOS INTEGRATED CIRCUIT DEVICE,申请号KR19940013309-传众专利搜索

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发明名称	PROCESS OF FABRICATING BI-CMOS INTEGRATED CIRCUIT DEVICE
摘要
申请公布号	KR0131431(B1)	申请公布日期	1998.04.15
申请号	KR19940013309	申请日期	1994.06.14
申请人	NEC CO.,LTD	发明人	SUZUKI, HISAMITSU
分类号	H01L27/06;H01L21/8244;H01L21/8249;H01L27/11;(IPC1-7):H01L27/08	主分类号	H01L27/06
代理机构		代理人
主权项
地址

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