High reliability die processing.

摘要

A hermetic die includes a bond pad which extends the high temperature range capability of plastic encapsulated devices. The die preferably includes a layer of field oxide (56) grown on selected areas of a silicon wafer (50). A barrier metal layer (70) is formed to extend laterally from a first point to a second point on oxide (56). Aluminum bond pad layer (74) is formed over barrier metal layer (70). Compressive nitride layer (26) is then formed over exposed areas of field oxide (56), extending laterally interior the lateral edges of layer (70) and pad (74). A second barrier metal layer (80) comprising titanium tungsten is deposited over pad layer (74) followed by the deposition of gold bond pad layer (84).