High frequency semiconductor device

摘要

A semiconductor device includes a silicon substrate (1) on which a circuit having a predetermined function is formed and a high frequency circuit chip (6) which is mounted on the silicon substrate (1) and operates at high frequencies, and operates with functions of the silicon substrate (1) and the high frequency circuit chip (6), wherein a thin film tape having a microstrip structure including an insulating film (3), a signal line (4) on a surface of the insulating film (3) and a grounding layer (8) on a rear surface of the insulating film (3), is disposed on the silicon substrate (1), whereby the silicon substrate (1) is electrically connected to the high frequency circuit chip (6). As a result, a conventional silicon substrate is employed and a production cost is reduced.