| 发明名称 |
Method of fabrication of an LED |
| 摘要 |
A compound semiconductor layer (16) of a first conductivity type is formed on a substrate (14), and a diffusion region (26) of a second conductivity type is formed on the compound semiconductor layer (16). The light-emitting diode has a high emitted light power, using a large-diameter wafer. <IMAGE>
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| 申请公布号 |
EP0836235(A2) |
申请公布日期 |
1998.04.15 |
| 申请号 |
EP19970115175 |
申请日期 |
1997.09.01 |
| 申请人 |
OKI DATA CORPORATION |
发明人 |
OGIHARA, MITSUHIKO.;NAKAMURA, YUKIO;TANINAKA, MASUMI;HAMANO, HIROSHI |
| 分类号 |
H01L27/15;H01L33/00;H01L33/30;H01L33/34;(IPC1-7):H01L33/00 |
主分类号 |
H01L27/15 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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