Method of manufacturing a high capacitance capacitor using sputtering

摘要

A method of fabricating a semiconductor device comprises the steps of: (a) forming a mask layer (13) over an upper surface of a semiconductor substrate (10) such that the mask layer (13) has an aperture (13a) penetrating the mask layer (13) and having an inclined lateral wall so as to make the aperture (13a) inverted taper shaped; (b) forming a first dielectric layer (14) at a first area over the upper surface of the semiconductor substrate (10) within the aperture (13a) by sputtering at a first sputtering incidence direction (I1); and (c) forming a first electrode layer (15) at a second area over the upper surface of the semiconductor substrate (10) within the aperture (13a) by sputtering at a second sputtering incidence direction (I2) which is different from the first sputtering incidence direction (I1). <IMAGE> <IMAGE>