Magnetostatic-wave device

摘要

A magnetostatic-wave device includes a dielectric substrate (12) on which parallel first electrically conductive lines are formed. A magnetostatic-wave device (18) formed of a gadolinium-gallium-garnet (GGG) substrate (20) on which yttrium-iron-garnet (YIG) thin films (22a, 22b) are formed is disposed on the first electrically conductive lines. Crossed second electrically conductive lines (24a-24d) are formed on a YIG thin film (22b). Lands (16a-16h) are formed at both ends of these electrically conductive lines and are connected to each other with bonding wire (28) to form one electrically conductive line. Input and output ends are formed between both ends of this electrically conductive line and the ground. <IMAGE>