发明名称 Method of densifying porous substrates by chemical vapor infiltration of silicon carbide
摘要 PCT No. PCT/FR94/01453 Sec. 371 Date Jun. 14, 1996 Sec. 102(e) Date Jun. 14, 1996 PCT Filed Dec. 13, 1994 PCT Pub. No. WO95/16803 PCT Pub. Date Jun. 22, 1995A reaction gas containing methyltrichlorosilane (MTS) and hydrogen is injected into the infiltration chamber (30) in which the substrate is placed and where predetermined infiltration temperature and pressure conditions obtain. The gas entering the infiltration chamber is preheated (by plates 46) so as to bring it up to temperature before coming into contact with the substrate. The residual gas containing the remainder of the reaction gas together with gaseous reaction products is extracted from the chamber. Infiltration is performed at a temperature lying in the range 960 DEG C. to 1050 DEG C., and preferably in the range 1000 DEG C. to 1030 DEG C., under a total pressure of not more than 25 kPa, and preferably equal to 7 kPa to 12 kPa, and the concentration of silicon-containing species in the residual gas is lowered at the outlet from the infiltration chamber, e.g. by injecting an inert gas (via 70).
申请公布号 US5738908(A) 申请公布日期 1998.04.14
申请号 US19960656347 申请日期 1996.06.14
申请人 SOCIETE EUROPEENNE DE PROPULSION 发明人 REY, JACQUES;CHARVET, JEAN-LUC;ROBIN-BROSSE, CHRISTIAN;DELPERIER, BERNARD;MINET, JACKY
分类号 C04B41/85;C04B41/50;C23C16/04;C23C16/32;C23C16/42;C23C16/452;(IPC1-7):C23C16/32 主分类号 C04B41/85
代理机构 代理人
主权项
地址