发明名称 |
Magnetoresistance effect element |
摘要 |
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
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申请公布号 |
US5738946(A) |
申请公布日期 |
1998.04.14 |
申请号 |
US19960652784 |
申请日期 |
1996.05.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IWASAKI, HITOSHI;OHSAWA, YUICHI;KONDOH, REIKO;HASHIMOTO, SUSUMU;SAWABE, ATSUHITO;KAMIGUCHI, YUZO;SAHASHI, MASASHI |
分类号 |
G11B5/39;H01F10/32;H01L43/08;H01L43/10;(IPC1-7):G11B5/127 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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