发明名称 Magnetoresistance effect element
摘要 It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
申请公布号 US5738946(A) 申请公布日期 1998.04.14
申请号 US19960652784 申请日期 1996.05.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IWASAKI, HITOSHI;OHSAWA, YUICHI;KONDOH, REIKO;HASHIMOTO, SUSUMU;SAWABE, ATSUHITO;KAMIGUCHI, YUZO;SAHASHI, MASASHI
分类号 G11B5/39;H01F10/32;H01L43/08;H01L43/10;(IPC1-7):G11B5/127 主分类号 G11B5/39
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