发明名称 |
Apparatus and method for planar end-point detection during chemical-mechanical polishing |
摘要 |
A chemical-mechanical polishing apparatus includes a slurry-wetted polishing pad attached to a substantially planar surface of a platen. A wafer carrier is positioned in close proximity to the platen, and it has a substantially planar surface to which one side of a semiconductor wafer is removably attachable so that an opposing side of the semiconductor wafer is disposed against the polishing pad. An actuator imparts a translational motion to the platen so that the polishing pad moves relative to and in polishing contact with the semiconductor wafer. A sensor detects a change in the imparted translational motion corresponding to a change in the coefficient of friction between the polishing pad and the opposing side of the semiconductor wafer indicative of a planar end point on the opposing side of the semiconductor wafer. The sensor preferably includes a laser and a laser detector using a laser reflection or laser interferometric method to detect the change in the imparted translational motion. Also, the apparatus preferably includes a controller coupled to the sensor and the actuator to adjust the actuator in response to the sensor detecting a change in the imparted translational motion.
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申请公布号 |
US5738562(A) |
申请公布日期 |
1998.04.14 |
申请号 |
US19960590541 |
申请日期 |
1996.01.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DOAN, TRUNG TRI;SANDHU, GURTEJ SINGH;GRIEF, MALCOLM K. |
分类号 |
B24B37/04;B24B49/12;(IPC1-7):B24B49/16 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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