| 摘要 |
PROBLEM TO BE SOLVED: To reduce power consumption due to capacitance between wirings and to enable higher integration by allowing a distance between a gate electrode and a source electrode or a drain electrode to be larger than that between the gate electrode and the rest of the previous case. SOLUTION: An inverter circuit has a complimentary configuration which uses an N-channel type thin-film transistor 100 and a P-channel type thin-film transistor 120, corresponding to an equivalent circuit relating to boss the N- channel type thin-film transistor 100 and the P-channel type thin-film transistor 120, in the inverter circuit, with distances D2 and D2' between a gate electrode 105-a drain electrode 108 where applied signal frequency is high, being twice that of distances D1 and D1' between the gate electrode 105-source electrodes 106 and 126, the increase in area required for a circuit arrangement is suppressed to a minimum, over the entire inverter circuit, for efficient reduction in power consumption. |
