| 摘要 |
<p>PURPOSE: To provide a device where a protection layer is formed adjacent to a region for reducing the possibility of oxidizing and reducing a certain region in a semiconductor device when the possibility is not preferable. CONSTITUTION: A substrate 10 contains a dope region 11 and an oxide layer 12 and Si plug 13 being subjected to patterning. When the substrate is oxidized, SiO2 layer is generated at one portion of the Si plug, so that SiO2 needs to be eliminated before forming an interconnection part on the plug and at the same time an oxide layer also needs to be eliminated partially. Therefore, a conductor layer 21 is formed on the oxide layer 12 and is subjected to patterning and a protection cap is formed on the plug 13. A conductor layer 21 is made of a mixture of a single substance metal and a conductive metal oxide, for example, Ru and RuO2 , Re and ReO2 or ReO3 , and Ir and IrO2 . A mask layer is formed on the conductor layer and an exposed part is etched for patterning. Since the Si plug is covered with the layer 21, it cannot be oxidized easily. Also, it can maintain an improved electrical connection even if it is made of Ru and RuO2 .</p> |
