| 摘要 |
<p>PROBLEM TO BE SOLVED: To freely control the critical dimension up to a fine range in a shifter region where luminous intensity is decreased, by controlling the dose amt. of exposure light in an exposing process to form the phase shifter region of a phase inversion mask. SOLUTION: A second photosensitive film pattern and a lightshielding pattern 320A are used as an etching mask to etch the exposed part of a transparent substrate 310 to form a trench region S1 in the transparent substrate 310. In the trench region S1, a phase shifter region of a phase inversion mask is formed. In this method, the depth of the trench region S1 is determined so that the light transmitted through this region shows 180 phase difference from the light transmitted through a nonshifter region. Then the second photosensitive pattern is removed to complete the phase inversion mask. In this method, the dose amt. of exposure light is controlled in the exposing process to form the phase shifter region of the phase inversion mask, the critical dimension in the shifter region can be controlled to a fine range.</p> |
