Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film

摘要

A method for producing a substrate for forming a polysilicon thin film by forming an amorphous silicon film of a thickness not more than 200 ANGSTROM , irradiating excimer laser light onto the amorphous silicon film to crystallize silicon particles contained in the amorphous silicon film; and irradiating the amorphous silicon film with hydrogen radicals to etch the amorphous silicon film.