| 摘要 |
A method for manufacturing lateral bipolar transistors, whereby a highly doped collector zone is produced in the silicon layer of a SOI substrate provided with a basic doping and using a mask. A structured dielectric layer covering at least this collector zone is then applied. This dielectric layer leaves the region provided for the emitter and the base free. This region left free is re-doped, and an auxiliary layer is then applied surface-wide with a uniform thickness. A doping for an emitter zone is introduced by using this auxiliary layer as shielding for the base zone to be manufactured. Subsequently, the emitter, base and collector are provided with contacts.
|
