| 发明名称 |
Semiconductor device incorporating a capacitor formed in a ramiform gap |
| 摘要 |
A semiconductor device with holes of porous texture in a part of the surface of a semiconductor substrate. The holes are filled with a conductive material across an insulating layer.
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| 申请公布号 |
US5739565(A) |
申请公布日期 |
1998.04.14 |
| 申请号 |
US19940365318 |
申请日期 |
1994.12.28 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NAKAMURA, YOSHIO;MIYAWAKI, MAMORU;UENO, ISAMU |
| 分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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