| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable distinct digital gradation display by controlling the timing to connect reference signals to TFTs with digital values, thereby controlling the voltages to be applied on these TFTs. SOLUTION: A silicon oxide film as a blocking layer 51 is formed. Patterns to open only the source and drain regions are thereafter formed at photoresists 53, 54 by using masks P1, P2. The source and drain regions 55 to 58 are then formed. Next, the formation of an interlayer insulator 68 is executed as the formation of the silicon oxide film by a sputtering method. Windows 79 for electrodes are formed by using a photomask 70. After leads 74 and contacts 73 are formed by using a photomask 76, the formation of an interlayer insulator 80 is executed again as the formation of the silicon oxide film by the sputtering method. Next, an org. resin 85 for flattening is applied on the plane and pixel electrodes 88 are formed thereon and the voltages to be applied on the TFTs are controlled, by which the distinct digital gradation display is made possible.</p> |
