| 摘要 |
PROBLEM TO BE SOLVED: To suppress oxidation of a semiconductor surface in continuous plasma film-forming process, and to improve the characteristics of the transistor manufactured. SOLUTION: The plasma processing device comprises multiple processing sections including at least a plasma CVD processing section, where the first vacuum chamber 7 containing the first gas supply means 93 and the first power apply means 103 is provided, and a plasma sputtering processing section where the second vacuum chamber 8 including the second gas supply means 12 and the second power apply means 13 is provided, and a substrate 20 on which multiple layers are formed is transported through the multiple processing chambers, sequentially for processing. In that case, a third vacuum chamber 3, placed at least between the plasma CVD processing section and the plasma sputtering processing section, is provided for transportation of the substrate 20 in the first vacuum chamber 7 to the second vacuum chamber 8, without affecting the vacuum in the first and second vacuum chamber 7 and 8. |
