| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a conductive pattern containing a high-density pattern reduced in pattern interval can be formed by using inexpensive wet etching. SOLUTION: A method for forming conductive pattern includes a process for successively forming an insulating film 12 and a conductive thin film in a laminated state on a metallic blank plate 11, a process for forming a photoresist pattern on the conductive thin film, and a process for forming a thin lower-layer conductive pattern 10a containing a high-density pattern by wet-etching the conductive thin film by using the photoresist pattern as a mask. The method also includes a process for removing the photoresist pattern and a process for forming a conductive pattern 10, composed of two layers of a lower-layer conductive pattern 10a and an upper-layer conductive pattern 10b by growing a pattern 10b on the pattern 10a by electroplating or electroless plating. Thus the conductive pattern 10 is formed. |
