| 摘要 |
Put a base material into a vaporizer such as MOCVD or MBE, etc. Vaporize a n+ buffer layer, and an n reflection layer(14) consisting of multiple AIA-AIGaAs pairs on it. Considering periodical change of refraction rate, reflect the light in more than 90% of the reflection rate, making sure a laser should emit toward the surface of a semiconductor, not to an n+ base material(10). And ensure that the band gap energy of a activated layer(20) is smaller than the upper and lower parts of a grating layer(22,18) and the electric charge implanted from the contact area(30,32) is effectively constrained to the activated layer(20), after forming an n cladding(16) and a p cladding(24) layer into Gal-XAS, implant actively into the activated layer(20) in order to form the p+ layer(26). Then form the circular grating layer(28) onto the p+ layer(26), p contact area(30) onto the upper part of the p+ layer(26), outside of the circular grating layer(28), and n contact layer on the n+ base material.
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