| 摘要 |
PROBLEM TO BE SOLVED: To improve ohmic characteristics, lower the operating voltage and increase light extraction efficiency by providing a semiconductor light-emitting device, wherein an oxide film is prevented from being formed on the surface of a p-type contact layer. SOLUTION: An n-type contact layer 10 and a p-type contact layer 12 are formed with a light-emitting layer, including Inx Aly Ga1-x-y (0<=x<=1-y, 0<=y<=1-x) put between an n-type electrode 14, and a p-type electrode 15 are so formed as to be electrically connected to the n-type and the p-type contact layer. An antioxidant protective layer 13 is formed on the surface of the p-type contact layer 12, and the p-type electrode 15 and the p-type contact layer 12 are electrically connected through an alloy layer which is made by diffusing a metal which constitutes the p-type electrode 15 into the protective layer 13. |
