METHOD FOR MANUFACTURING SEMICONDUCTOR PEVICE

摘要

p-type well region on a side of a substrate; n-type well region on the other side of the substrate; a device separating isolation film formed on the border of the p-type and the n-type well regions; a gate oxide film on the substrate; a gate electrode extended to the both p-type and n-type well region on the gate oxide film; p-type and n-type diffusion regions formed on the p-type and n-type well regions at the both side of the gate electrode; a n-type gate electrode formed on the p-type well region layer; a p-type gate electrode on the n-type well region layer; and connecting wires between a side of each the p-type and n-type gate electrodes.