| 摘要 |
A method of fabricating a heterojunction bipolar transistor having high current gain includes the steps of sequentially depositing a first conductivity type high-concentration GaAs sub-collector layer, first conductivity type low-concentration collector layer, second conductivity type base layer and first conductivity type emitter layer on a semi-insulating GaAs substrate, mesa-etching the laminated structure to form an emitter, base and collector, forming emitter, base and collector electrodes according to ohmic contact, and forming metal lines. The emitter is configured of GayIn1-yP having large energy gap to maximize the emitter injection efficiency, and the base is configured of Ge having high minority carrier concentration, low recombination current and small energy gap, to increase current gain using the energy gap difference between the GayIn1-yP emitter and Ge base.
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