METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR

摘要

A fabrication method of FET(Field Effect Transistor) having a T-shaped gate metal electrode is provided to simplify the process and minimize a length of electrode. The method comprises the steps of: sequentially forming a first insulating layer(2) and a PR pattern(3) on a substrate(1); depositing a second insulating layer(5) on the entire surface of the resultant structure; forming a sidewall(6) at the side of the PR pattern(3) by anisotropic etching the second insulating layer(5); etching the first insulating layer(2) using the sidewall(6) as a mask; removing the sidewall(6); depositing a gate metal on the entire surface of the resultant structure; and forming a T-shaped gate metal electrode(7) by lift-off the PR pattern(3)