ELECTRICALLY ERASABLE AND PROGRAMMABLE NON-VOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an electrically erasable and programmable memory device which has redundant circuits capable of being tested. SOLUTION: A redundancy control circuit provided with a selectable faulty address storing means is provided with a first direct memory access testing means which connects the memory cell selected in a first testing mode to each output terminal Oi and a second direct memory access testing means 24 which is started in the second testing mode so as to diretly couple the memory elements AB0-AB7, GB of the faulty address storing means to each element of B1-B64 by bit of the second level to directly connect memory elements AB0-AB7, GB to the output terminal Oi.