| 摘要 |
PROBLEM TO BE SOLVED: To provide a process, capable of etching an anti-reflective organic coating from a silicon substrate contained. SOLUTION: A substrate 10 is laid in a process chamber. A process gas, formed of oxygen, compound selected from a family formed of compounds containing hydrogen and bromine, compound containing hydrogen and iodine and a mixture of these are introduced into the chamber. The compound is to be preferably HBr. The plasma of the process gas is generated in the process chamber for etching the film. The process ineffective provides anisotropic etching of the film with the aid of a superior control limiting range, and a high selectively of the film, depending on the substrate 10 and a high-speed etching of the film. |
