发明名称 |
Double heterojunction light emitting diode with gallium nitride active layer |
摘要 |
A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
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申请公布号 |
US5739554(A) |
申请公布日期 |
1998.04.14 |
申请号 |
US19950436141 |
申请日期 |
1995.05.08 |
申请人 |
CREE RESEARCH, INC. |
发明人 |
EDMOND, JOHN A.;KONG, HUA-SHUANG |
分类号 |
H01L33/00;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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