发明名称 Thick film construct for quadrature translation of rf signals
摘要 A thick film construct and quadrature coupler for use in fabricating devices such as IQ modulators, IQ demodulators, vector modulators, image reject mixers, and multi-channel mixers. The thick film construct includes a dielectric substrate base with a metallized backside, a first metal trace deposited on the non-metallized side of the substrate base, a dielectric layer deposited over and around the first metal trace, and a second metal trace deposited on the dielectric layer. The first and second metal traces are aligned over their widths and lengths so to form a balanced transmission line structure where the first and second metal traces represent top and bottom lines in the balanced structure. This thick film structure serves as the foundation for microwave capacitors, mixers, and other transmission line based structures, including a quadrature coupler. The quadrature coupler which, in turn forms the basis for more complex devices, includes an input port, an isolated port, in-phase output port (I-port), and quadrature phase output port (Q-port).
申请公布号 AU4482797(A) 申请公布日期 1998.04.14
申请号 AU19970044827 申请日期 1997.09.17
申请人 RF PRIME CORPORATION 发明人 LOREN E. RALPH
分类号 H01P3/08;H01F17/00;H01P1/203;H01P3/18;H01P5/10;H01P5/12;H01P5/18;H03D7/14;H03D9/06 主分类号 H01P3/08
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