PHASE SHIFT MASK AND FABRICATION METHOD THEREOF

摘要

A phase shift mask and method thereof is provided to prevent formation of unnecessary patterns. The method comprises the steps of: forming bar-shaped chrome patterns(1) having a spaced distance on a quartz substrate(10); forming a phase shifting pattern(2) such as SOG(spin on glass) or SiO2 on a portion of the chrome patterns(1); and forming a photoresist pattern(20a) used as phase shifting layer the range of 0 -108 degrees at back-side of edge of the phase shifting pattern(2) by exposing and developing a positive photoresist(20) using as the phase shifting pattern(2) and the chrome pattern(1) as a mask.