| 摘要 |
PROBLEM TO BE SOLVED: To enable preventing the generation of pinholes or weak spots, which are generated in a buried oxide film by a method, wherein when oxygen ions are implanted in a silicon substrate and the silicon substrate is made to vibrate. SOLUTION: When oxygen ions O<-> are implanted into a silicon substrate 1 vertically into the substrate a comparatively high frequency (10kHz or more) of ultrasonic waves are given to the substrate 1, using an ultrasonic vibrator mounted to a wafer stage. After the oxygen ions O<-> are implanted and an ion-implanted oxygen layer 2 is formed in the substrate 1, an oxidation treatment at 1350 deg.C of is performed and an SIMOX substrate 10 having a thin-film silicon layer of a thickness of 200nm, for example, and a buried oxide film layer of a thickness of 1μm is formed. Thereby, the generation rate of the defective dielectric breakdown strength of the SIMOX substrate can be reduced to roughly O.
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