发明名称 Active shield for generating a plasma for sputtering
摘要 <p>A combination coil and shield (104) for a plasma chamber (100) in a semiconductor fabrication system is provided. The coil-shield has a plurality of turns to couple energy efficiently into a plasma and also substantially blocks deposition material from reaching a second shield (106) positioned behind the first shield. &lt;IMAGE&gt;</p>
申请公布号 EP0836218(A2) 申请公布日期 1998.04.15
申请号 EP19970307864 申请日期 1997.10.06
申请人 APPLIED MATERIALS, INC. 发明人 EDELSTEIN, SERGIO;SUBRAMANI, MANI
分类号 C23C14/00;C23C14/34;H01J37/32;H01J37/34;H01L21/02;H01L21/203;H01L21/285;(IPC1-7):H01J37/34 主分类号 C23C14/00
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