发明名称 SUBSTRATE SEPARATION IN III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent cracks appearing from extending to an element region at the time of dicing. SOLUTION: Using a blade 40 which is narrower in width than the width W of a processed region E between electrodes of devices, an electrode 7 of each device is diced to 15μm depth in the surface of a sapphire substrate 1, along a dicing line 20 set at the center of the processed region E to form a separating recess 16. At that time, in a region G between the side face 40 a of the blade 40 and a side wall 81 of an electrode formation region A, a first contact layer 63, a second contact layer 62, a p-type layer 61, a light-emitting layer 5, and an n-type layer 4 exist. Therefore, the stress concentrates on a cross line B, between the electrode formation region A and the side wall 81 which forms an L shape with the electrode formation region A, and a crack C appearing at the time of dicing is formed toward the cross line B. As a result, the crack C does not extend to the electrode formation region A or under and electrode 8, thereby inhibiting to block a current channel of the electrode 8 by the crack C.
申请公布号 JPH1098212(A) 申请公布日期 1998.04.14
申请号 JP19960271628 申请日期 1996.09.20
申请人 TOYODA GOSEI CO LTD 发明人 SHIBATA NAOKI;HIRANO ATSUO;KAMIMURA TOSHIYA
分类号 H01L21/301;H01L33/20;H01L33/32;H01L33/34;H01L33/40;H01S5/00;H01S5/323 主分类号 H01L21/301
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