发明名称 VARIABLE HIGH TEMPERATURE CHUCK FOR HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION
摘要 <p>An electrostatic chuck (100) comprises an electrode cap (1) with a dielectric layer (1c) for attracting and holding the back side of a semiconductor wafer (4) positioned on the top surface of the dielectric layer (1c), and a lower electrode (2). The electrostatic chuck (100) is heated by resistive heating elements (10) attached to or embedded within the chuck (100). The electrostatic chuck (100) is cooled by circulating liquid coolant through channels (6, 6a) in the body of the chuck. Coolant gas is provided through channels (5, 5a, 5b) at the back side of the semiconductor wafer (4) to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the coooling functions.</p>
申请公布号 WO1998014999(A1) 申请公布日期 1998.04.09
申请号 US1997017576 申请日期 1997.09.30
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