SWITCHED GROUND READ FOR EPROM MEMORY ARRAY

摘要

A technique for reading data from a selected memory element (25) of an EPROM array having rows (28) and columns (30) with addressable memory elements which may be selectively accessed at respective intersections of the rows and columns. Each memory element (25) includes a transistor having gate (27), source (29), and drain (30) electrodes, and after selection of a particular element from which data is to be read by appropriately biasing the row and column associated with that memory element, the source (29) electrode thereof is selectively connected to ground by a switching element (33) to allow current flow through the source-drain path of the memory element and enable the read out of data therefrom after the drain and gate voltages of the memory element (25) have been stabilized.