发明名称 Semiconductor memory device
摘要 A semiconductor memory device is provided which is able to supply data at high speed to a microprocessor (MPU) without being affected by the dispersion of power supply voltage, temperature and production process conditions. A semiconductor chip includes an address buffer, a decoder, a word driver, data lines, a sense amplifier, a main amplifier, an output buffer, and a PLL to which an external clock is applied. The PLL generates controls signals PHI 1 through PHI 7 with their phases shifted in turn, and supplies them to those internal circuits ranging from the address buffer to the output buffer. The PLL can control the phases of these control signals to be constant without being affected by the variations of temperature and power supply voltage. Thus, the internal circuits are precharged or equalized by the control signals, and then operated by the control signals to amplify data signal in turn. Therefore, the operating cycle time can be shortened as compared with the access time, and the access time can be kept constant.
申请公布号 US5740115(A) 申请公布日期 1998.04.14
申请号 US19950498969 申请日期 1995.07.06
申请人 HITACHI, LTD.;HITACHI ULSI ENGINEERING CORPORATION 发明人 ISHIBASHI, KOICHIRO;KOMIYAJI, KUNIHIRO;UEDA, KIYOTSUGU;TOYOSHIMA, HIROSHI
分类号 G11C7/10;G11C7/22;(IPC1-7):G11C7/00 主分类号 G11C7/10
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